2SB1370 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor(-60V, -3A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SB1370 TRANSISTOR (PNP)
FEATURES
z Breakdown Voltage High
z Reverse Cut-off Current Small
z Saturation Voltage Low
z Collector Power dissipation
P_CM : 2 W (Tamb=25.)
30 W (Tcase= 25.)
TO-220F
1. BASE
2. COLLECTOR
3. EMITTE
1₂₃
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
T_J
Junction temperature
T_stg
Storage temperature
Value
Unit
-60
V
-60
V
-5
V
-3
A
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ
Collector-base breakdown voltage
V_(BR)CBO I_C=-50μA, I_E=0
-60
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-1mA, I_B=0
-60
Emitter-base breakdown voltage
V_(BR)EBO I_E=-50μA, I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-60V, I_E=0
Emitter cut-off current
I_EBO
V_EB=-4V, I_C=0
DC current gain
h_FE * VCE=-5V, IC=-500mA
100
Collector-emitter saturation voltage
V_CE(sat) * IC=-2A, IB=-0.2A
Base-emitter saturation voltage
V_BE(sat) * IC=-2A, IB=-0.2A
Transition frequency
f_T
V_CE=-5V, I_C=-500mA,f=5MHz
15
Out capacitance
*Pulse test: t_p≤300μS, δ≤0.02.
CLASSIFICATION OF h_FE
Rank
Cob V_CB= -10 V ,f=1MH_Z
E
80
F
Range
100-200
160-320
Max
-10
-10
320
-1.5
-1.5
Unit
V
V
V
μA
μA
V
V
MHz
pF
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1
C,May,2016