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| 2SB1322A Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency power amplification) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB1322A TRANSISTOR (PNP)
FEATURES
z Allowing Supply with The Radial Taping
TO â 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-1
625
200
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -0.01mA,IE=0
-60
V
V(BR)CEO IC=-2mA,IB=0
-50
V
V(BR)EBO IE=-0.01mA,IC=0
-5
V
ICBO
VCB=-20V,IE=0
-0.1
μA
IEBO
VEB=-5V,IC=0
-0.1
μA
hFE(1)
VCE=-10V, IC=-0.5A
85
340
hFE(2)
VCE=-5V, IC=-1A
50
VCE(sat) IC=-0.5A,IB=-0.05A
-0.4
V
VBE (sat) IC=-0.5A,IB=-0.05A
-1.2
V
Cob
VCB=-10V,IE=0, f=1MHz
30
pF
fT
VCE=-10V,IC= -0.05A, f=200MHz
200
MHz
CLASSIFICATION OF hFE(1)
RANK
Q
RANGE
85-170
R
120-240
S
170-340
www.cj-elec.com
1
','HF,2015
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