2SB1308 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (-50V, -3A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1308 TRANSISTOR (PNP)
FEATURES
z Power Transistor
z Excellent DC current Gain
z Low Collector-emitter Saturation Voltage
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-30
-20
-6
-3
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C=-50µA,I_E=0
-30
V
V_(BR)CEO I_C=-1mA,I_B=0
-20
V
V_(BR)EBO I_E=-50µA,I_C=0
-6
V
I_CBO
V_CB=-20V,I_E=0
-0.5
µA
I_EBO
V_EB=-5V,I_C=0
-0.5
µA
h_FE
V_CE=-2V, I_C=-0.5A
82
390
V_CE(sat) I_C=-1.5A,I_B=-0.15A
-0.45
V
C_ob
V_CB=-20V,I_E=0, f=1MHz
60
pF
VCE=-6V,IC=-50mA,
f_T
f=30MHz
120
MHz
CLASSIFICATION OF h_FE
RANK
P
RANGE
82–180
MARKING
BFP
Q
120–270
BFQ
R
180–390
BFR
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D,Otcct,2015