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| 2SB1274 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – 60V/3A Low-Frequency Power Amplifier Applications | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SB1274 TRANSISTOR (PNP)
FEATURES
z Wide ASO (Adoption of MBIT Process).
z Low Saturation Voltage.
z High Reliability.
z High Breakdown Voltage.
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
-60
V
-60
V
-6
V
-3
A
2
W
150
â
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC =-1mA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-5mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA, IC=0
Collector cut-off current
ICBO
VCB=-40V, IE=0
Emitter cut-off current
IEBO
VEB=-4V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-5V, IC=-500mA
VCE=-5V, IC=-3A
Collector-emitter saturation voltage
VCE(sat) IC=-2A, IB=-200mA
Base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF hFE(1)
Rank
VBE
VCE=-5V, IC=-500mA
fT
VCE=-5V, IC=-500mA
Cob
VCB=-10V, IE=0, f=1MHz
Q
R
Range
70-140
100-200
www.cj-elec.com
1
Min Typ Max Unit
-60
V
-60
V
-6
V
-0.1 μA
-0.1 μA
70
280
20
-1
V
-1
V
100
MHz
60
pF
S
140-280
C,Nov,2014
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