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| 2SB1261 Datasheet, PDF (1/4 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon PNP transistor in a TO-252 Plastic Package. | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SB1261 TRANSISTOR (PNP)
TO-252-2L
FEATURES
z Low VCE(sat)
z High DC Current Gain
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-60
-7
-3
1
125
150
-55~+150
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
IEBO
hFE(1)*
hFE(2)*
hFE(3)*
VCE(sat)*
VBE(sat)*
Collector output capacitance
Cob
Transition frequency
fT
*Pulse test: pulse width â¤350μs, duty cycle⤠2.0%.
Test conditions
IC=-100µA,IE=0
IC=-1mA,IB=0
IE=-100µA,IC=0
VCB=-60V,IE=0
VEB=-7V,IC=0
VCE=-2V, IC=-0.2A
VCE=-2V, IC=-0.6A
VCE=-2V, IC=-2A
IC=-1.5A,IB=-0.15A
IC=-1.5A,IB=-0.15A
VCB=-10V,IE=0, f=1MHz
VCE=-5V,IC=-1.5A
Min Typ Max Unit
-60
V
-60
V
-7
V
-10 μA
-10 μA
60
100
400
50
-0.3 V
-1.2 V
40
pF
50
MHz
CLASSIFICATION OF hFE(2)
RANK
M
RANGE
100-200
L
160-320
K
200-400
www.cj-elec.com
1
D,Mar,2016
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