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| 2SB1261-Z Datasheet, PDF (1/2 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR MP-3 | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SB1261-Z TRANSISTOR (PNP)
TO-251-3L
FEATURES
z High hFE
z Low VCE(sat)
1. BASE
2. COLLECTOR
MAXIMUM RATINGS (Ta=25 â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current -Continuous
-3
A
PD
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
1
W
150
â
-55-150
â
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless other wise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
-60
Collector-emitter breakdown voltage
V(BR)CEO IC =-1mA, IB=0
-60
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
-7
Collector cut-off current
ICBO
VCB=-60V, IE=0
Emitter cut-off current
IEBO
VEB=-7V, IC=0
hFE(1) VCE=-2V, IC=-200mA
60
DC current gain
hFE(2) VCE=-2V, IC=-600mA
100
hFE(3) VCE=-2V, IC=-2A
50
Collector-emitter saturation voltage
VCE(sat) IC=-1.5A, IB=-150mA
Base-emitter saturation voltage
VBE(sat) IC=-1.5A, IB=-150mA
Transition frequency
fT
VCE=-5V, IC=-1.5A
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Switching Time
Turn on Time
Storage Time
Fall Time
ton
VCC=-10V, IC=-1A, IB1=-IB2=-0.1A,
tstg
RL=10â¦
tf
CLASSIFICATION OF h FE(2)
Rank
M
L
Range
100-200
160-320
Typ Max Unit
V
V
V
-10
µA
-10
µA
400
-0.3
V
-1.2
V
50
MHz
40
pF
0.5
2.0
µs
0.5
K
200-400
www.cj-elec.com
1
D,Nov,2014
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