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| 2SB1202 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Current Switching Applications | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SB1202 TRANSISTOR (PNP)
TO-251-3L
FEATURES
z Adoption of FBET,MBIT Processes
z Large Current Capacity and Wide ASO
z Low Collector-to-Emitter Saturation Voltage
z Fast Switching Speed
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current âContinuous
-3
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHAR ACTERISTICS (Ta= 25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
fT
Cob
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100µA, IC=0
VCB=-40V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-100mA
VCE=-2V, IC=-3A
IC=-2A, IB=-100mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
Min Typ Max Unit
-60
V
-50
V
-6
V
-1
µA
-1
µA
100
560
35
-0.7 V
150
MHz
39
pF
CLASSIFICATION OF h FE(1)
Rank
R
Range
100-200
S
140-280
T
200-400
U
280-560
www.cj-elec.com
1
C,Nov,2014
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