2SB1189 Datasheet, PDF (1/4 Pages) Rohm – Medium power transistor (-80V, -0.7A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1189 TRANSISTOR (PNP)
SOT-89-3L
FEATURES
z High breakdown voltage
z Complements to 2SD1767
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE
2. COLLECTOR 1
2
3. EMITTER
3
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-80
-5
-0.7
0.5
150
-55~150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=-50μA,I_E=0
V_(BR)CEO I_C=-2mA,I_B=0
V_(BR)EBO I_E=-50μA,I_C=0
I_CBO
V_CB=-50V,I_E=0
I_EBO
V_EB=-4V,I_C=0
h_FE
V_CE=-3V,I_C=-100mA
V_CE(sat) I_C=-500mA,I_B=-50mA
f_T
V_CE=-10V,I_C=-50mA,f=100MHz
C_ob
V_CB=-10V,I_E=0,f=1MHz
Min Typ
-80
-80
-5
82
100
Max Unit
V
V
V
-0.5 μA
-0.5 μA
390
-0.4
V
MHz
20
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
P
82-180
BDP
Q
120-270
BDQ
R
180-390
BDR
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DA,JOucnt,20154