2SB1188 Datasheet, PDF (1/4 Pages) Rohm – Medium power Transistor(-32V, -2A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1188 TRANSISTOR (PNP)
FEATURES
z
Low VCE(sat).
z Complements the 2SD1766
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
V_CEO
V_EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-32
V
-5
V
SOT-89-3L
1. BASE
2. COLLECTOR 1
2
3. EMITTER
3
I_C
P_C
R_θJA
T_J
T_stg
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From
Junction To Ambient
Junction Temperature
Storage Temperature
-2
500
250
150
-55~150
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V_(BR)CBO I_C=-50μA , I_E=0
-40
V
Collector-emitter breakdown voltage
V_(BR)CEO I_C= -1mA , I_B=0
-32
V
Emitter-base breakdown voltage
Collector cut-off current
V_(BR)EBO I_E=-50μA, I_C=0
I_CBO
V_CB=-20 V , I_E=0
-5
V
-1
μA
Emitter cut-off current
I_EBO
V_EB=-4 V , I_C=0
-1
μA
DC current gain *
h_FE
V_CE=-3V, I_C= -0.5A
82
390
Collector-emitter saturation voltage *
Transition frequency
Output capacitance
* Measured using pulse current.
CLASSIFICATION OF h_FE
Rank
Range
Marking
P
82-180
BCP
V_CE(sat)
f_T
C_ob
I_C=-2A, I_B= -0.2A
V_CE=-5V, I_C=-0.5A ,f=30MHz
V_CB=-10V, I_E=0 ,f=1MHz
Q
120-270
BCQ
-0.8
V
100
MHz
50
pF
R
180-390
BCR
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1
D,Jul,2015