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| 2SB1184 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (-60V, -3A) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SB1184 TRANSIST OR (PNP)
FEATURES
z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)
z Complements the 2SD1760 / 2SD1864.
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current âContinuous
-3
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
TO-252-2L
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=-50µA, IE=0
-60
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA, IB=0
-50
Emitter-base breakdown voltage
V(BR)EBO IE=-50µA, IC=0
-5
Collector cut-off current
ICBO
VCB=-40V, I E=0
Emitter cut-off current
IEBO
VEB=-4V, I C=0
DC current gain
hFE(1) VCE=-3V, I C=-0.5A
82
Collector-emitter saturation voltage
VCE(sat) IC=-2A, IB=-0.2A
Base-emitter saturation voltage
VBE(sat) IC=-1.5A, IB=-0.15A
Transition frequency
fT
VCE=-5V, I C=-0.5A, f=30MHz
Collector output capacitance
Cob
VCB=-10V, I E=0, f=1MHz
Typ Max Unit
V
V
V
-1
µA
-1
µA
390
-1
V
-1.2 V
70
MHz
50
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
P
82-180
www.cj-elec.com
Q
120-270
1
R
180-390
D,Mar,2016
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