2SB1182 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – Medium Power Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L(4R) Plastic-Encapsulate Transistors
2SB1182 TRANSISTOR (PNP)
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
-40
V
-32
V
-5
V
-2
A
1.5
W
150
℃
-55-150
℃
TO-252-2L
1.BASE
2.COLLECTOR
3EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test condition
Min
Collector-base breakdown voltage
= V_(BR)CBO I_C=-50µA,I_E 0
-40
Collector-emitter breakdown voltage = V(BR)CEO IC=-1mA,IB 0
-32
Emitter-base breakdown voltage
= V_(BR)EBO I_E=-50µA,I_C 0
-5
Collector cut-off current
= I_CBO V_CB=-20V,I_E 0
Emitter cut-off current
= I_EBO V_EB=-4V,I_C 0
DC current gain
h_F= _E(1) V_CE=-3V,I_C -500mA
82
Collector-emitter saturation voltage
= V_CE(sat) I_C=-2A,I_B -200mA
Transition frequency
f_T = V_CE=-5= V,I_C -0.5A,f 30MHz
Collector output capacitance
C_ob
V_CB=-1= 0V,= I_E 0,f 1MHz
Typ Max Unit
V
V
V
-1
µA
-1
µA
390
-0.8
V
100
MHz
50
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
P
82-180
Q
120-270
R
180-390
www.cj-elec.com
1
D,Mar,2016