2SB1132 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1132 TRANSISTOR (PNP)
FEATURES
z Low V_CE(sat)
z Compliments 2SD1664
SOT-89-3L
1. BASE
2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. EMITTER
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
-40
V
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Continuous Collector Current
I_{CP }Pulsed Collector Current
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
-32
V
-5
V
-1
A
-2
A
500
mW
150
℃
-55~150
℃
6LQJOHSXOVH,3: PV
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
1
2
3
Parameter
Collector-base breakdown voltage
Symbol Test conditions
V_(BR)CBO I_C=-50μA,I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-1mA,I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-50μA,I_C=0
Collector cut-off current
I_CBO
V_CB=-20V,I_E=0
Emitter cut-off current
I_EBO
V_EB=-4V,I_C=0
DC current gain
h_FE
V_CE=-3V,I_C=-100mA
Collector-emitter saturation voltage
V_CE(sat) I_C=-500mA,I_B=-50mA
Transition frequency
f_T
V_CE=-5V,I_C=-50mA,f=30MHz
Collector output capacitance
CLASSIFICATION OF h_FE
Rank
C_ob
V_CB=-10V,I_E=0,f=1MHz
P
Q
Range
82-180
120-270
Marking
BAP
BAQ
Min Typ
-40
Max Unit
V
-32
V
-5
V
-0.5 μA
-0.5 μA
82
390
-0.2 -0.5
V
150
MHz
20
30
pF
R
180-390
BAR
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1
D,Oct,2015