2SB1073 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency amplification)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1073 TRANSISTOR (PNP)
SOT-89-3L
FEATURES
z Low collector-emitter saturation voltage V_CE(sat)
z Large peak collector current I_C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-30
-20
-7
-4
0.5
150
-55-150
Unit
V
V
V
A
W
℃
℃
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=-10μA,I_E=0
V_(BR)CEO I_C=-1mA,I_B=0
V_(BR)EBO I_E=-10μA,I_C=0
I_CBO
V_CB=-30V,I_E=0
I_EBO
V_EB=-7V,I_C=0
h_FE
V_CE=-2V,I_C=-2A
V_CE(sat) I_C=-3A,I_B=-100mA
f_T
V_CE=-6V,I_C=-50mA,f=200MHz
C_ob
V_CB=-20V,I_E=0,f=1MHz
Min Typ
-30
-20
-7
120
120
40
Max Unit
V
V
V
-0.1
μA
-0.1
μA
315
-1
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
Q
120-205
IQ
R
180-315
IR
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1
D,Oct,2015