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| 2SB1068 Datasheet, PDF (1/3 Pages) NEC – PNP SILICON TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB1068 TRANSISTOR (PNP)
TO â 92
1. EMITTER
FEATURES
z Low Collector Saturation Voltage
z High DC Current Gain
z High Collector Power Dissipation
z Complementary To The 2SD1513 NPN Transistor
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
2. COLLECTOR
3. BASE
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-20
-16
-6
-2
625
200
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=- 0.1mA,IE=0
-20
V
V(BR)CEO IC=-1mA,IB=0
-16
V
V(BR)EBO IE=-0.1mA,IC=0
-6
V
ICBO
VCB=-16V,IE=0
-0.1
μA
IEBO
VEB=-6V,IC=0
-0.1
μA
hFE(1)
VCE=-2V, IC=-0.1A
135
650
hFE(2)
VCE=-2V, IC=-1.5A
100
VCE(sat)1 IC=-1A,IB=-10mA
-0.4
V
VCE(sat)2 IC=-1.5A,IB=-20mA
-0.5
V
VCE(sat)3 IC=-1.5A,IB=-75mA
-0.5
V
VBE (sat) IC=-1.5A,IB=-75mA
-1.2
V
VBE
VCE=-6V, IC=-5mA
-0.55
-0.65
V
Cob
VCB=-10V,IE=0, f=1MHz
60
pF
fT
VCE=-10V,IC=-50mA
100
MHz
CLASSIFICATION OF hFE(1)
RANK
L
RANGE
135-270
K
200-400
U
300-650
www.cj-elec.com
1
C,Dec,2015
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