2SA966 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SA966 TRANSISTOR (PNP)
FEATURE
Complementary to 2SC2236 and 3 Watts output Applications.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
-30
V
V_CEO
Collector-Emitter Voltage
-30
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current -Continuous
-1.5
A
Pc
Collector Power Dissipation
0.9
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ Max Unit
Collector-base breakdown voltage
V(BR)_CBO I_C= -1mA , I_E=0
-30
V
Collector-emitter breakdown voltage
V(BR)_CEO I_C= -10mA ,I_B=0
-30
V
Emitter-base breakdown voltage
V(BR)_EBO I_E= -1mA, I_C=0
-5
V
Collector cut-off current
I_CBO
V_CB= -30V, I_E=0
-0.1
μA
Emitter cut-off current
I_EBO
V_EB= -5V, I_C=0
-0.1
μA
DC current gain
h_FE
V_CE=-2V, I_C= -500mA
100
320
Collector-emitter saturation voltage
V_CE(sat)
I_C= -1.5 A, I_B= -0.03A
-2
V
Base-emitter voltage
Transition frequency
Collector output capacitance
V_BE
I_C= -500mA,V_CE=-2V
f_T
V_CE= -2V, I_C=-500mA
C_ob
V_CB=-10V, I_E=0, f=1MHz
-1
V
120
MHz
30
pF
CLASSIFICATION OF h_FE
Rank
Range
O
100-200
Y
160-320
www.cj-elec.com
1
C,Mar,2016