2SA940 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.5A,150V,25W)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SA940 TRANSISTOR (PNP)
FEATURES
z Wide Safe Operating Area.
z Complementary to 2SC2703
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Paramenter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Value
Unit
-150
V
-150
V
-5
V
-1.5
A
1.5
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C =-100μA, I_E=0
V_(BR)CEO I_C =-1mA, I_B=0
V_(BR)EBO I_E=-100μA, I_C=0
I_CBO
V_CB=-120V, I_E=0
I_EBO
V_EB=-5V, I_C=0
h_FE
V_CE=-10V, I_C=-0.5A
V_CE(sat) I_C=-0.5A, I_B=-50mA
V_BE
V_CE=-10V, I_C=-0.5A
f_T
V_CE=-10V, I_C=-0.5A
C_ob
V_CB=-10V, I_E=0, f=1MHz
Min
-150
-150
-5
40
-0.65
Typ Max Unit
V
V
V
-10
μA
-10
μA
140
-1.5
V
-0.85 V
4
MHz
55
pF
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1
B,Nov,2014