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| 2SA935 Datasheet, PDF (1/3 Pages) TRANSYS Electronics Limited – TO-92L Plastic-Encapsulated Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92L Plastic-Encapsulate Transistors
2SA935 TRANSISTOR (PNP)
FEATURES
z General Purpose Switching Application
TO â 92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-80
-80
-5
-0.7
750
167
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -50µA,IE=0
-80
V
V(BR)CEO IC=-2mA,IB=0
-80
V
V(BR)EBO IE=-50µA,IC=0
-5
V
ICBO
VCB=-50V,IE=0
-0.5
μA
IEBO
VEB=-4V,IC=0
-0.5
μA
hFE
VCE=-3V, IC=-100mA
82
390
VCE(sat) IC=-500mA,IB=-50mA
-0.4
V
Cob
VCB=-10V,IE=0, f=1MHz
20
pF
fT
VCE=-10V,IC=-50mA
100
MHz
CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
www.cj-elec.com
1
C,Mar,2016
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