2SA854S Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92S Plastic-Encapsulate Transistors
2SA854S TRANSISTOR (PNP)
FEATURES
z Large I_C.
z Low V_CE(sat). Idea for Low-voltage Operation.
z Complements the 2SC1741S.
TO – 92S
1. EMITTER
2. COLLECTOR
3. BASE
12 ₃
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-32
-5
-0.5
200
625
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
C_ob
f_T
Test conditions
I_C= -0.1mA,I_E=0
I_C=-1mA,I_B=0
I_E=-0.1mA,I_C=0
V_CB=-20V,I_E=0
V_EB=-4V,I_C=0
V_CE=-3V, I_C=-10mA
I_C=-100mA,I_B=-10mA
V_CB=-10V,I_E=0, f=1MHz
VCE=-5V,IC=-20mA, f=100MHz
Min Typ Max Unit
-40
V
-32
V
-5
V
-1
μA
-1
μA
120
390
-0.4 V
8
pF
200
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
Q
120-270
R
180-390
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