2SA836 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA836 TRANSISTOR (PNP)
FEATURES
z High DC Current Gain
z Low Frequency Amplifier
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
0$5.,1*
$
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Equivalent Circuit
25'(5,1* ,1)250$7,21
3DUW 1XPEHU
6$
6$7$
3DFNDJH
72
72
3DFNLQJ 0HWKRG
%XON
7DSH
3DFN 4XDQWLW\
1000pcs/Bag
2000pcs/Box
MAXIMUM RATINGS (T_a=25Я unless otherwise noted)
Symbol
V _CBO
V _CEO
V _EBO
I_C
P_C
R _{ș JA}
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Vo ltage
Collector Curren t
Collector Powe r Dissipation
T hermal Resist ance From Junction To Ambient
Junction Te mperature
Storage Te mperature
V alue
-55
-55
-5
-0.1
200
625
150
-55~+150
Unit
V
V
V
A
mW
Я /W
Я
Я
www.cj-elec.com
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