2SA821 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA821
TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 0.25 W Tamb=25
Collector current
I_CM: -0.03 A
Collector-base voltage
V_(BR)CBO : -210 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
TO 92
1.EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= -50 A IE=0
-210
V
Collector-emitter breakdown voltage V(BR)CEO IC= -0.1 mA , IB=0
-210
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -50 A IC=0
-5
V
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB=-150V, IE=0
IEBO
VEB= -4.5 V , IC=0
hFE
VCE=-3 V, IC= -5mA
56
-1
A
-1
A
270
Collector-emitter saturation voltage
VCEsat
IC= -2mA, IB= -0.2mA
-0.6
V
Transition frequency
fT
VCE=-5V, IC= -2mA
30
MHz
Output capacitance
C_ob
VCE=-10V,IE=0,f=1MHz
12 pF
CLASSIFICATION OF hFE
Rank
Range
N
56-120
P
82-180
Q
120-270