2SA817A Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (DRIVER STAGE, VOLTAGE AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92MOD Plastic-Encapsulate Transistors
2SA817A TRANSISTOR (PNP)
TO-92MOD
FEATURES
. Complementary to 2SC1627A.
. Driver Stage Application of 30 to 35 Watts Amplifiers.
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
Value
-80
-80
-5
-400
800
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Typ
Collector-base breakdown voltage V(BR)CBO IC= -100 uA, IE=0
-80
Collector-emitter breakdown voltage
V_(BR)CEO I_C= -5 mA, I_B=0
-80
Emitter-base breakdown voltage
V_(BR)EBO I_E= -100μA, I_C=0
-5
Collector cut-off current
I_CBO
V_CB= -50 V , I_E=0
Collector cut-off current
I_EBO
V_EB= -5V , I_B=0
DC current gain
h_FE(1) V_CE= -2V, I_C= -50mA
70
h_FE(2) V_CE= -2V, I_C= -200mA
40
Collector-emitter saturation voltage
V_CE(sat) I_C=-200 mA, I_B= -20mA
Base-emitter voltage
V_BE
V_CE= -2V , I_C= -5mA
-0.55
Transition frequency
f_T
V_CE=-10V, I_C=-10mA
100
Out capacitance
Cob V_CB= -10 V , f=1MH_Z
14
Max Unit
V
V
V
-0.1
μA
-0.1
μA
240
-0.4
V
-0.8
V
MHz
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
O
70-140
Y
120 - 240
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