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| 2SA812 Datasheet, PDF (1/4 Pages) NEC – AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD | |||
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA812 TRANSISTOR (PNP)
FEATURES
z Complementary to 2SC1623
z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA)
z High Voltage: Vceo=-50V
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-60
VCEO Collector-Emitter Voltage
-50
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-100
PC
Collector Power Dissipation
200
RÎJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Unit : mm
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
Test conditions
IC=-100μA, IE=0
IC= -1mA, IB=0
IE= -100μA, IC=0
VCB=- 60 V, IE=0
VEB= -5V, IC=0
VCE=- 6V, IC= -1mA
IC=-100mA, IB= -10mA
IC=-1mA, VCE=-6V
VCE=-6V, IC= -10mA
VCB=-10V,IE=0,f=1MHz
Min
-60
-50
-5
90
-0.58
Typ
Max Unit
V
V
V
-0.1 μA
-0.1 μA
600
-0.3
V
-0.68 V
180
MHz
4.5
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
M4
90-180
M4
M5
135-270
M5
M6
200-400
M6
M7
300-600
M7
www.cj-elec.com
1
CA,JOucnt,2014
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