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| 2SA720 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA719/2SA720 TRANSISTOR (PNP)
FEATURES
For Low-Frequency Power Amplification
and Driver Amplification
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage 2SA719
2SA720
VCEO
Collector-Emitter Voltage 2SA719
2SA720
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
Value
-30
-60
-25
-50
-5
-500
625
150
-55-150
Unit
V
V
V
mA
mW
â
â
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
2SA719
2SA720
Collector-emitter breakdown voltage
2SA719
2SA720
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Transition frequency
fT
Collector Output Capacitance
CLASSIFICATION hFE(1)
Rank
Range
Cob V
Q
85-170
Test conditions
Min
Typ
Max
IC= -10uA, IE=0
-30
-60
IC= -10mA ,IB=0
IE= -10uA, IC=0 -5
VCB= -20V,IE=0
VEB= -4V,IC=0
VCE=-10V, IC= -150mA
VCE=-10V, IC= -500mA
IC=-300mA, IB= -30mA
IC= -300mA, IB=-30mA
VCE= -10V, IC= -50mA
f = 200MHz
CB=-10V,IE=0,f=1MHZ
-25
-50
85
40
200
-0.1
-0.1
340
-0.6
-1.5
15
R
120-240
S
170-340
Unit
V
V
V
uA
uA
V
V
MHz
pF
www.cj-elec.com
1
','HF,2015
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