2SA608N Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifier Applications

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA608N TRANSISTOR (PNP)
FEATURES
z Large Current Capacity and Wide ASO.
APPLICATIONS
z Capable of Being Used in The Low Frequency to High
Frequency Range.
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-6
-0.15
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_{BE (sat)}
C_ob
f_T
Test conditions
I_C=-0.01mA,I_E=0
I_C=-1mA,I_B=0
I_E=-0.01mA,I_C=0
V_CB=-40V,I_E=0
V_EB=-5V,I_C=0
V_CE=-6V, I_C=-1mA
V_CE=-6V, I_C=-0.1mA
I_C=-100mA,I_B=-10mA
I_C=-100mA,I_B=-10mA
V_CB=-6V,I_C=0, f=1MHz
VCE=-6V,IC=-10mA
Min Typ Max Unit
-60
V
-50
V
-6
V
-0.1
μA
-0.1
μA
160
560
70
-0.3
V
-1
V
4.5
pF
200
MHz
CLASSIFICATION OF h_FE(1)
RANK
RANGE
F
160-320
G
280-560
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