2SA554 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SOT-89-3L Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SA554
TRANSISTOR (PNP)
FEATURES
z Low Saturation Voltage
z High Speed Switching
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MARKING: A554
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-100
-100
-6
-2
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
I_C= -0.1mA,I_E=0
I_C=-1mA,I_B=0
I_E=-0.1mA,I_C=0
V_CB=-100V,I_E=0
V_EB=-4V,I_C=0
V_CE=-3V, I_C=-100mA
-100
-100
-6
120
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
V_CE(sat)
I_C=-0.5A,I_B=-25mA
I_C=-1A,I_B=-50mA
C_ob
V_CB=-10V,I_E=0, f=1MHz
32
f_T
VCE=-5V,IC= -0.1A
30
Max
-1
-1
270
-0.2
-0.3
Unit
V
V
V
uA
uA
V
V
pF
MHz
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1
A-2,Dec,2016