2SA2029 Datasheet, PDF (1/4 Pages) Rohm – General Purpose Transistor (-50V, -150mA)

JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate Transistors
2SA2029 General 3urpose 7ransistors (PNP)
FEATURES
z Excellent h_FE linearity
z Complements the 2SC5658
Marking: FQFRFS
SOT-723
1. BASE
2. EMITTER
3. COLLECTOR
Absolute maximum ratings (T_a=25℃)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction temperature
Storage Temperature
Limit
-60
-50
-6
-150
150
150
-55~+150
Unit
V
V
V
mA
mW
℃
℃
Electrical characteristics (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
I_C=-50μA,I_E=0
I_C=-1mA,I_B=0
I_E=-50μA,I_C=0
V_CB=-60V,I_E=0
V_EB=-6V,I_C=0
V_CE=-6V,I_C=-1mA
I_C=-50mA,I_B=-5mA
V_CE=-12V,I_C=2mA, f=30MHz
V_CB=-12V,I_E=0, f=1MHz
Classification of h_FE
Rank
Range
Q
120~270
R
180~390
Min Typ Max Unit
-60
V
-50
V
-6
V
-0.1
μA
-0.1
μA
120
560
-0.5
V
140
MHz
5
pF
S
270~560
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1
D,Nov,2014