2SA2018 Datasheet, PDF (1/4 Pages) Rohm – Low frequency transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SA2018 TRANSISTOR (PNP)
FEATURES
z A collector current is large.
z Low V_CE(sat). V_CE(sat)≤-250mV at I_C = -200mA / I_B = -10mA
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: BW
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
-15
V
-12
V
-6
V
-0.5
A
0.15
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min
V_(BR)CBO I_C=-10μA, I_E=0
-15
V_(BR)CEO I_C=-1mA, I_B=0
-12
V_(BR)EBO I_E=-10μA, I_C=0
-6
I_CBO
V_CB= -15 V, I_E=0
I_EBO
V_EB=- 6V, I_C=0
h_FE
V_CE=-2V, I_C=-10mA
270
V_CE(sat) I_C=-200mA,I_B=-10mA
f_T
V_CE=-2V,I_C=-10mA, f=100MHz
C_ob
V_CB=-10V,I_E=0,f=1MHz
Typ Max Unit
V
V
V
-0.1
μA
-0.1
μA
680
-0.25
V
260
MHz
6.5
pF
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