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| 2SA1943 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
2SA1943 TRANSISTOR (PNP)
FEATURES
z High Collector Current Capability
z High Power Dissipation
z High Frequency
z High Voltage
z Complement to 2SC5200
TO â 3P
1. BASE
2. COLLECTOR
3. EMITTER
APPLICATIONS
z High-Fidelity Audio Output Amplifier
z General Purpose Power Amplifier
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
PCM
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Collector Power Dissipation (TC=25â)
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-230
-230
-5
-15
3.5
150
36
150
-55~+150
Unit
V
V
V
A
W
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
IC=-0.1mA,IE=0
IC=-50mA,IB=0
-230
-230
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA,IC=0
-5
Collector cut-off current
ICBO
VCB=-230V,IE=0
-5
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-5
DC current gain
hFE(1)
VCE=-5V, IC=-1A
55
160
hFE(2)*
VCE=-5V, IC=-7A
35
Collector-emitter saturation voltage
VCE(sat) IC=-8A,IB=-0.8A
-3
Base-emitter voltage
VBE
VCE=-5V, IC=-7A
-1.5
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
360
Transition frequency
fT
VCE=-5V,IC=-1A
30
*Pulse test
CLASSIFICATION OF hFE (1)
RANK
R
O
RANGE
55-110
80-160
Unit
V
V
V
μA
μA
V
V
pF
MHz
www.cj-elec.com
1
B,Nov,2014
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