2SA1832 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SA1832 TRANSISTOR (PNP)
SOT-523
FEATURES
z High voltage and high current
z Excellent h_FE linearity
z Complementary to 2SC4738
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
R_θJA
T_J, T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Value
-50
-50
-5
-150
100
125
-55 to +125
Unit
V
V
V
mA
mW
℃/W
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_CBO
V_CEO*
V_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
I_C=-100μA,I_E=0
I_C=-1mA,I_B=0
I_E=-100μA,I_C=0
V_CB=-50V,I_E=0
V_EB =-5V, I_C=0
V_CE=-6V,I_C=-2mA
I_C=-100mA,I_B=-10mA
V_CE=-10V,I_C=-1mA
V_CB=-10V,I_E=0,f =1MHz
Min
-50
-50
-5
120
80
Typ
Max Unit
V
V
V
-100
nA
-100
nA
400
-0.3
V
MHz
4
7
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
Y
120-240
SY
GR
200-400
SG
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1
C,Apr,2015