2SA1797 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (-50V, -3A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SA1797 TRANSISTOR (PNP)
FEATURES
z Low saturation voltage
z Excellent DC current gain characteristics
z Complements to 2SC4672
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pluse Current
Collector Power dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-6
-2
-3
500
150
-55~150
Unit
V
V
V
A
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=-50μA, I_E=0
V_(BR)CEO I_C=-1mA, I_B=0
V_(BR)EBO I_E=-50μA, I_C=0
I_CBO
V_CB=-50V, I_E=0
I_EBO
V_EB=-5V, I_C=0
h_FE
V_CE=-2V, I_C=-500mA
V_CE(sat) I_C=-1A, I_B=-50mA
f_T
V_CE=-2V, I_C=-0.5A, f=100MHz
C_ob
V_CB=-10V, I_E=0, f=1MHz
CLASSIFICATION of h_FE
Rank
Range
Marking
P
82-180
AGP
Q
120-270
AGQ
Min Typ Max Unit
-50
V
-50
V
-6
V
-0.1 μA
-0.1 μA
82

-0.35 V
200
MHz
36
pF
R
180-390
AGR
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1
E,Nov,2015