2SA1774 Datasheet, PDF (1/4 Pages) ON Semiconductor – PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SA1774 TRANSISTOR (PNP)
SOT-523
FEATURES
z Reduces Board Space
z High h_FE
z Low V_CE(sat)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=-50uA, I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-1.0mA, I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-50μA, I_C=0
Collector cut-off current
I_CBO
V_CB=-60V, I_E=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
I_EBO
V_EB=-6V, I_C=0
h_FE⁽¹⁾ V_CE=-6.0V, I_C=-1.0mA
V_CE(sat)⁽²⁾ I_C=-50mA, I_B=-5.0mA
(2)
V_BE(sat) I_C=-50mA, I_B=-5.0mA
Transition frequency
f_T
V_CE=-12V, I_C=-2.0mA,f=30MH_Z
Collector output capacitance
C_ob
V_CB=-12V, I_E=0, f=1MHz
Note(1):
CLASSIFICATION OF h_FE
Rank
Range
Marking
Q
120-270
FQ
R
180-390
FR
(2).Pulse Test :Pulse Width ≤300us,D.C ≤ 2%
www.cj-elec.com
1
1. BASE
2. EMTTER
3. COLLECTOR
Value
-60
-50
-6
-150
150
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
Min Typ Max Unit
-60
V
-50
V
-6.0
V
-0.1 uA
-0.1 μA
120
560
-0.5
V
-1.2
V
140
MHz
3.5
5
pF
S
270-560
FS
D,Mar,2016