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| 2SA1740 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – High-Voltage Driver Applications | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SA1740 TRANSISTOR (PNP)
FEATURES
z High breadown voltage
z Excellent hFE linearlity
Marking: AK
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
RθJA
Thermal Resistance from Junction to Ambient
Value
-400
-400
-5
-200
500
150
-55-150
250
Unit
V
V
V
mA
mW
â
â
â /W
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-10μA,IE=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-10μA,IC=0
Collector cut-off current
ICBO
VCB=-300V,IE=0
Emitter cut-off current
DC current gain
IEBO
VEB=-4V,IC=0
hFE
VCE=-10V,IC=-50mA
Collector-emitter saturation voltage
VCE(sat) IC=-50mA,IB=-5mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=-50mA,IB=-5mA
fT
VCE=-30V,IC=-10mA
Collector output capacitance
Cob
VCB=-30V,IE=0,f=1MHz
Turn-ON Time
Turn-OFF Time
ton
VCC=-150V,Ic=-50mA,
toff
IB1=-IB2=-5mA
Min
-400
-400
-5
60
Typ
70
5
0.25
5
Max
-100
-100
200
-0.6
-1
Unit
V
V
V
nA
nA
V
V
MHz
pF
μs
μs
CLASSIFICATION OF hFE
Rank
Range
D
60-120
E
100-200
www.cj-elec.com
1
E,Oct,2015
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