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| 2SA1700 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – High-Voltage Driver Applications | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SA1700 TRANSISTOR (PNP)
FEATURES
z High Breakdown Voltage
z Adoption of MBIT Process
z Excellent hFE Linearity
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-400
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current âContinuous
-0.2
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
TO-251-3L
1.BASE
2.COLLECTOR
3.EMITTER
ELECTRICAL CHARACTERISTICS(Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC =-10µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC =-1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-10µA,IC=0
Collector cut-off current
ICBO
VCB=-300V,IE=0
Emitter cut-off current
IEBO
VEB=-4V,IC=0
DC current gain
hFE
VCE=-10V,IC=-50mA
Collector-emitter saturation voltage
VCE(sat) IC=-50mA,IB=-5mA
Base- emitter saturation voltage
VBE(sat) IC=-50mA,IB=-5mA
Transition frequency
fT
VCE=-30V,IC=-10mA
Output Capacitance
Cob
VCB=-30V,f=1MHz
Reverse Transfer Capacitance
Cre
VCB=-30V,f=1MHz
Turn-on Time
Turn-off Time
ton
VCC=-150V,IB1=IB2=-5mA,RL=3kâ¦
toff
Min Typ Max Unit
-400
V
-400
V
-5
V
-0.1
µA
-0.1
µA
60
200
-0.8
V
-1
V
70
MHz
5
pF
4
pF
0.25
µs
5
µs
CLASSIFICATION OF hFE
Rank
Range
D
60-120
E
100-200
www.cj-elec.com
1
D,Feb,2016
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