2SA1633 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TRANSISTORS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-247 Plastic-Encapsulate Transistors
2SA1633 TRANSISTOR (PNP)
FEATURES
z High Breakdown Voltage
z High Current and High Power Capability
APPLICATIONS
z For Audio Output Applications
TO – 247
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-150
-150
-6
-10
3.5
36
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
Test conditions
I_C=-100µA,I_E=0
I_C=-50mA,I_B=0
I_E=-100µA,I_C=0
V_CB=-120V,I_E=0
V_EB=-5V,I_C=0
V_CE=-5V, I_C=-1A
I_C=-5A,I_B=-0.5A
VCE=-5V,IC=-1A
Min Typ Max Unit
-150
V
-150
V
-6
V
-10
μA
-10
μA
60
320
-2.5
V
10
MHz
www.cj-elec.com
1
B,Nov,2014