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| 2SA1615 Datasheet, PDF (1/2 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SA1615 TRANSISTOR (PNP)
TO â 251-3L
FEATURES
z Large Current Capacity
z High hFE and Low Collector Saturation Voltage
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-30
-20
-10
-10
1
125
150
-55~+150
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
IEBO
hFE(1)*
hFE(2)*
VCE(sat)*
VBE(sat)*
Collector output capacitance
Cob
Transition frequency
fT
*Pulse test: pulse width â¤10ms, duty cycle⤠50%.
Test conditions
IC=-1mA,IE=0
IC=-10mA,IB=0
IE=-1mA,IC=0
VCB=-20V,IE=0
VEB=-8V,IC=0
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-4A
IC=-4A,IB=-0.05A
IC=-4A,IB=-0.05A
VCB=-10V,IE=0, f=1MHz
VCE=-5V,IC=-1.5A
Min
-30
-20
-10
200
160
Typ Max Unit
V
V
V
-1 μA
-1 μA
600
-0.25 V
-1.2 V
220
pF
180
MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
L
200-400
K
300-600
www.cj-elec.com
1
C,Nov,2014
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