2SA1611 Datasheet, PDF (1/4 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
2SA1611 TRANSISTOR (PNP)
FEATURES
 High DC Current Gain
 High Voltage
 Complementary to 2SC4177
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-60
VCEO Collector-Emitter Voltage
-50
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-100
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector-emitter voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE*
VCE(sat)
VBE
fT
Test conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-60V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-1mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-1mA
VCE=-6V,Ic=-10mA
Collector output capacitance
Cob
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
VCB=-10V, IE=0, f=1MHz
M4
90–180
M4
M5
135–270
M5
Min
Typ
Max
-60
-50
-5
-100
-100
90
600
-0.3
-0.58
-0.68
180
4.5
M6
200–400
M6
M7
300–600
M7
Unit
V
V
V
nA
nA
V
V
MHz
pF
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