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2SA1586 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
2SA1586 TRANSISTOR (PNP)
FEATURES
ï¬ High DC Current Gain
ï¬ High Voltage and High Current.
ï¬ Complementary to 2SC4116
ï¬ Small Package
APPLICATIONS
ï¬ General Purpose Amplification.
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-50
VCEO Collector-Emitter Voltage
-50
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-150
PC
Collector Power Dissipation
100
RÎJA Thermal Resistance From Junction To Ambient
1250
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
SOTâ323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
IC=-100mA, IB=-10mA
VCE=-10V,Ic=-1mA
VCB=-10V, IE=0, f=1MHz
Min
Typ
-50
-50
-5
70
80
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
O
70â140
SO
Y
120â240
SY
GR(G)
200â400
SG
Max
-100
-100
400
-0.3
7
Unit
V
V
V
nA
nA
V
MHz
pF
www.cj-elec.com
1
CA,JSuenp,,22001144
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