2SA1585 Datasheet, PDF (1/4 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon PNP transistor in a TO-92 Plastic Package

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA1585
FEATURES
TRANSISTOR (PNP)
SOT-23
z Low VCE(sat)
z Excellent DC current gain characteristics. Power dissipation
MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
Parameter
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C Collector Power Dissipation
T_j
Junction Temperature
T_stg Storage Temperature Range
Value
-20
-20
-6
-2
350
150
-55-150
Units
V
V
V
A
mW
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CEsat
f_T
I_C= -50µA , I_E=0
I_C= -1 mA , I_B=0
I_E=- 50µA, I_C=0
V_CB=-20V , I_E=0
V_EB= -5V , I_C=0
V_CE=-2 V, I_C= -0.1A
I_C= -2A, I_B=-0.1A
V_CE=-2V, I_C=-0.5A
f=100MHz
-20
-20
-6
120
240
MAX UNIT
V
V
V
-0.1
µA
-0.1
µA
390
-0.5
V
MHz
CLASSIFICATION OF h_FE
Rank
Range
Marking
Q
120-270
$(4
R
180-390
$(R
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