2SA1579 Datasheet, PDF (1/4 Pages) Rohm – High-voltage Amplifier Transistor (-120V, -50mA)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
2SA1579 TRANSISTOR (PNP)
FEATURES
z High breakdown voltage. (BV_CEO = -120V)
z Complements the 2SC4102
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-120
VCEO Collector-Emitter Voltage
-120
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-50
PC
Collector Power Dissipation
100
RΘJA Thermal Resistance From Junction To Ambient
1250
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=-50μA,I_E=0
V_(BR)CEO I_C=-1mA,I_B=0
V_(BR)EBO I_E=-50μA,I_C=0
I_CBO
V_CB=-100V,I_E=0
I_EBO
V_EB=-4V,I_C=0
h_FE
V_CE=-6V,I_C=-2mA
V_CE(sat) I_C=-10mA,I_B=-1mA
f_T
V_CE=-12V,I_C=-2mA,f=30MHz
C_ob
V_CB=-12V,I_E=0,f=1MHz
Min Typ
-120
-120
-5
180
140
3.2
Max Unit
V
V
V
-0.5 μA
-0.5 μA
560
-0.5
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
www.cj-elec.com
R
180-390
RR
1
S
270-560
RS
CA,JSuenp,,22001144