2SA1577 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (-32V, -0.5A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T ^{SOT-323 Plastic-Encapsulate Transistors}
2SA1577 TRANSISTOR (PNP)
FEATURES
z Large I_CMax.=-500mA
z Low V_CE(sat).Ideal for low-voltage operation.
z Complements the 2SC4097.
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Power Dissipation
T_J
RΘJA
Junction Temperature
Thermal Resistance From Junction To Ambient
T_stg
Storage Temperature
Value
-40
-32
-5
-500
200
150
250
-55-150
Unit
V
V
V
mA
mW
℃
℃ /W
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Symbol
Test conditions
V_(BR)CBO I_C=-100μA,I_E=0
V_(BR)CEO I_C=-1mA,I_B=0
V_(BR)EBO I_E=-100μA,I_C=0
I_CBO
V_CB=-20V,I_E=0
I_EBO
V_EB=-4V,I_C=0
h_FE
V_CE=-3V,I_C=-10mA
V_CE(sat) I_C= -100mA, I_B=-10mA
f_T
V_CE=-5V, I_C=-20mA ,f =100MHz
C_ob
V_CB=-10V,I_E=0,f=1MHz
CLASSIFICATION OF h_FE
Rank
Range
MARKING
P
82-180
HP
Q
120-270
HQ
Min Typ Max Unit
-40
V
-32
V
-5
V
-1
μA
-1
μA
82
390
-0.4
V
200
MHz
7
pF
R
180-390
HR
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