2SA1576A Datasheet, PDF (1/4 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
2SA1576A TRANSISTOR (PNP)
SOT-323
FEATURES
z Excellent h_FE linearity
z Complements the 2SC4081
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-60
VCEO Collector-Emitter Voltage
-50
VEBO Emitter-Base Voltage
-6
IC
Collector Current
-150
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=-50μA,I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-1mA,I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-50μA,I_C=0
Collector cut-off current
I_CBO
V_CB=-60V,I_E=0
Emitter cut-off current
I_EBO
V_EB=-6V,I_C=0
DC current gain
h_FE
V_CE=-6V,I_C=-1mA
Collector-emitter saturation voltage
V_CE(sat) I_C=-50mA,I_B=-5mA
Transition frequency
f_T
V_CE=-12V,I_C=-2mA,f=30MHz
Collector output capacitance
CLASSIFICATION OF h_FE
Rank
Range
Marking
C_ob
V_CB=-12V,I_E=0,f=1MHz
Q
120-270
FQ
R
180-390
FR
Min Typ
-60
-50
-6
120
140
4
Max Unit
V
V
V
-0.1 μA
-0.1 μA
560
-0.5
V
MHz
5
pF
S
270-560
FS
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