2SA1313 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISITOR (AUDIO FREQUENCY LOW POWER AMPLIFIER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
2SA1313 TRANSISTOR (PNP)
FEATURES
z Excellent h_FE Linearity
: h_FE(2) =25(Min)at V_CE =-6V,I_C=- 400mA.
z High Voltage :V_CEO=-50V(Min)
z Complements to the 2SC3325.
MARKING : ACO,ACY
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-500
200
150
-55~+150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
Test conditions
I_C=-100μA,I_E=0
I_C=-1mA,I_B=0
I_E=-100μA,I_C=0
V_CB=-50V,I_E=0
V_EB=-5V,I_C=0
V_CE=-1V,I_C=-100mA
V_CE=-6V,I_C=-400mA
V_CE(sat)
V_BE
f_T
C_ob
I_C=-100mA,I_B=-10mA
V_CE=-1V,I_C=-100mA
V_CE=-6V,I_C=-20mA
V_CB=-6V,I_E=0,f=1MHz
Min Typ Max Unit
-50
V
-50
V
-5
V
-0.1 μA
-0.1 μA
70
240
O 25
Y ₄₀
-0.25 V
-1
V
200
MHz
13
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
O
70-140
Y
120-240
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CA,JOucnt,2014