2SA1300 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SA1300 TRANSISTOR (PNP)
FEATURES
z High DC Current Gain and Excellent h_FE Linearity
z Low Saturation Voltage
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
-20
V
V_CEO
Collector-Emitter Voltage
-10
V
V_EBO
Emitter-Base Voltage
-6
V
I_C
Collector Current -Continuous
-2 A
P_C
Collector Power Dissipation
0.75
W
T_j
Junction Temperature
T_stg
Storage Temperature
150
℃
-55~ +15
℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
S ymbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
Cob
7est condiWLRQV Min
Typ
Max Unit
I_C=-1mA , I_E=0 -20
 V
I_C=-10mA , I _B=0 -10
 V
I_E=-1mA, I_C=0 -6
 V
V_CB=-20V , I_E=0
-0.1 µA
V_EB=-6V,,& 
-0.1 µA
V_CE=-1V, I _C=-0.5A 140
600
I_C=-2A, I_B= -100mA
-0.82 V
I_C= -2A, V_CE=-1V
V_CE=-1V, I_C= -0.5A
f = 30MHz
V_CB=-10V,IE=0
f=1MHZ
-1.5 V
140
 MHz
 50 S)
CLASSIFICATION OF h_FE
Rank
Range
Y
140-280
GR
200-400
BL
300-600
www.cj-elec.com
1
C,Dec,2015