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| 2SA1283 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – SILICON PNP 2SA1283 | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T TO-92MOD Plastic-Encapsulate Transistors
2SA1283 TRANSISTOR (PNP)
FEATURES
z High Collector-Emitter Voltage
z Low Collector-Emitter Saturation Voltage
TO â 92M
TO â 92MOD
1. COLLECTOR
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-60
-6
-1
900
139
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -10µA,IE=0
-60
V
V(BR)CEO IC=-2mA,IB=0
-60
V
V(BR)EBO IE=-10µA,IC=0
-6
V
ICBO
VCB=-50V,IE=0
-0.2
μA
IEBO
VEB=-4V,IC=0
-0.2
μA
hFE
VCE=-4V, IC=-100mA
55
300
VCE(sat) IC=-500mA,IB=-25mA
-0.3
V
Cob
VCB=-10V,IE=0, f=1MHz
25
pF
fT
VCE=-2V,IC=-10mA
50
MHz
CLASSIFICATION OF hFE
RANK
RANGE
C
55-110
D
90-180
E
150-300
www.cj-elec.com
1
C,Mar,2016
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