2SA1242 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISOTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SA1242 TRANSISTOR (PNP)
FEATURES
z Strobe Flash Applications Medium Power Amplifier Applications
z Excellent h_FE Linearity
: h_{FE (1)} = 100 to 320 (V_CE = −2 V, I_C = −0.5 A)
: h_{FE (2)} = 70 (min) (V_CE = −2 V, I_C = −4 A)
z Low Collector Saturation Voltage
: V_{CE (sat)} = −1.0 V (max) (I_C = −4 A, I_B = −0.1 A)
z High Power Dissipation
: P_C = 10 W (Tc = 25°C), P_C = 1.0 W (Ta = 25°C)
TO-251-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
-35
V
-20
V
-8
V
-5
A
1
W
150
℃
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=-100uA, I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-1mA, I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-100uA, I_C=0
Collector cut-off current
I_CBO
V_CB=-35V, I_E=0
Emitter cut-off current
I_EBO
V_EB=-8V, I_C=0
DC current gain
h_FE(1)
h_FE(2)
V_CE=-2V, I_C=-0.5A
V_CE=-2V, I_C=-4A
Collector-emitter saturation voltage
V_CE(sat) I_C=-4A, I_B=-0.1A
Base-emitter voltage
V_BE
V_CE=-2V, I_C=-4A
Transition frequency
f_T
V_CE=-2V, I_C=-0.5A
Collector output capacitance
CLASSIFICATION OF h_FE(1)
Rank
Range
C_ob
0
100-200
V_CB=-10V, I_E=0,f=1MH_Z
Min Typ
-35
-20
-8
100
70
170
62
Y
160-320
Max Unit
V
V
V
-100 nA
-100 nA
320
-1
V
-1.5
V
MHz
pF
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1
C,Nov,2014