2SA1235A Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – PNP TRANSISTOR

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA1235A TRANSISTOR (PNP)
SOT–23
FEATURES
 Low Collector Current
 Low Collector Power Dissipation
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-6
-200
200
625
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
IC=-100μA, IE=0
IC=-0.1mA, IB=0
IE=-100μA, IC=0
VCB=-60V, IE=0
VEB=-6V, IC=0
VCE=-6V, IC=-1mA
VCE=-6V, IC=-0.1mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V,IC=-10mA
VCB=-6V, IE=0, f=1MHz
1. BASE
2. EMITTER
3. COLLECTOR
Min
Typ
Max
-60
-50
-6
-100
-100
150
500
90
-0.3
-1
200
4
Unit
V
V
V
nA
nA
V
V
MHz
pF
CLASSIFICATION OF hFE(1)
RANK
RANGE
MARKING
M·E
150–300
M·E
M·F
250–500
M·F
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