2SA1204 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SA1204 TRANSISTOR (PNP)
FEATURES
z Complementary to 2SC2884
z Small Flat Package
z Audio Frequency Amplifier Application
z High DC Current Gain
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-35
-30
-5
-0.8
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C= -0.1mA,I_E=0
-35
V
V_(BR)CEO I_C=-10mA,I_B=0
-30
V
V_(BR)EBO I_E=-0.1mA,I_C=0
-5
V
I_CBO
V_CB=-35V,I_E=0
-100
nA
I_EBO
V_EB=-5V,I_C=0
-100
nA
h_FE(1)
V_CE=-1V, I_C=-100mA
100
320
h_FE(2)
V_CE=-1V, I_C=-700mA
35
V_CE(sat) I_C=-500mA,I_B=-20mA
-0.7
V
V_BE
V_CE=-1V, I_C=-10mA
-0.5
-0.8
V
C_ob
V_CB=-10V,I_E=0, f=1MHz
19
pF
f_T
VCE=-5V,IC= -10mA
120
MHz
CLASSIFICATION OF h_FE(1)
RANK
RANGE
MARKING
O
100–200
RO
Y
160–320
RY
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1
C,Oct,2015