2SA1201 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SA1201 TRANSISTOR (PNP)
FEATURES
z High voltage
z High transition frequency
z Complementary to 2SC2881
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-120
-120
-5
-0.8
0.5
150
-55-150
R _θJA
Thermal Resistance from Junction to Ambient 250
Unit
V
V
V
A
W
℃
℃
℃
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V_(BR)CBO I_C=-1mA,I_E=0
V_(BR)CEO I_C=-10mA,I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-1mA,I_C=0
Collector cut-off current
Emitter cut-off current
I_CBO
V_CB=-120V,I_E=0
I_EBO
V_EB=-5V,I_C=0
DC current gain
h_FE
V_CE=-5V,I_C=-100mA
Collector-emitter saturation voltage
Base-emitter voltage
V_CE(sat) I_C=-500mA,I_B=-50mA
V_BE
V_CE=-5V,I_C=-500mA
Transition frequency
f_T
V_CE=-5V,I_C=-100mA
Collector output capacitance
C_ob
V_CB=-10V,I_E=0,f=1MHz
CLASSIFICATION OF h_FE
Rank
O
Range
80-160
Marking
DO
Min Typ Max Unit
-120
V
-120
V
-5
V
-0.1 μA
-0.1 μA
80
240
-1
V
-1
V
120
MHz
30
pF
Y
120-240
DY
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1
D,Oct,2015