2SA1179 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA1179 TRANSISTOR (PNP)
FEATURES
. High breakdown voltage
MARKING: M
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
-55
V
V_CEO
Collector-Emitter Voltage
-50
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current -Continuous
-150
mA
P_D
Total Device Dissipation
200
mW
T_J, T_stg
Junction and Storage Temperature
-55-125
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO Ic=-10u A,I_E=0
V_(BR)CEO Ic=-1mA,I_B=0
V_(BR)EBO I_E=-10 u A,I_C=0
I_CBO
V_CB=-35V,I_E=0
I_EBO
V_EB=-4V,I_C=0
h_FE
V_CE=-6V,I_C=-1mA
V_CE(sat) I_C=-50mA,I_B=-5mA
V_BE(sat) I_C=-50mA,I_B=-5mA
f_T
V_CE=-6V,I_C=-10mA
C_ob
V_CB=-6V,I_E=0,f=1MHz
MIN TYP MAX UNIT
-55
V
-50
V
-5
V
-0.1 u A
-0.1 u A
200
400
-0.5
V
-1.0
V
180
MHz
4
pF