2SA1162 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
2SA1 162 TRANSISTOR (PNP)
FEATURES
^{. Low noise}
. Complementary to 2SC2712
^{. Small Package}
MARKING: SO , SY , SG
SOT-23
3
1
2
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-50
VCEO Collector-Emitter Voltage
-50
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-150
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol Test conditions
V_(BR)CBO I_C=-100μA,I_E=0
V_(BR)CEO I_C=-1mA,I_B=0
V_(BR)EBO I_E=-100μA,I_C=0
I_CBO
V_CB=-50V,I_E=0
I_EBO
V_EB=-5V,I_C=0
h_FE
V_CE=-6V,I_C=-2mA
V_CE(sat) I_C=-100mA,I_B=-10mA
f_T
V_CE=-10V,I_C=-1mA
C_ob
V_CB=-10V,I_E=0,f=1MHz
V_CE=-6V,I_c=0.1mA,
NF
f=1KHz,Rg=10KΩ
Min Typ Max Unit
-50
V
-50
V
-5
V
-0.1 μA
-0.1 μA
70
400
-0.3
V
80
MHz
7
pF
10
dB
CLASSIFICATION OF h_FE
Rank
Range
O
70-140
Y
120-240
GR(G)
200-400
www.cj-elec.com
1
CA,JOucnt,2014